NTE Electronics NTE4023B Integrated Circuit CMOS Triple 3-Input NAND Gate, 3V-18V, 14-Lead DIP Package

NTE Electronics NTE4023B Integrated Circuit CMOS Triple 3-Input NAND Gate, 3V-18V, 14-Lead DIP Package

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R 224.99
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  • 3Vdc to 18Vdc supply voltage range
  • All outputs buffered
  • Capable of driving two low-power TTL loads or one low-power schottky TTL load over the rated temperature range
  • Double diode protection on all inputs

The NTE4023B (14-Lead DIP) is triple 3-input NAND gate device constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure. This complementary MOS logic gate find primary use where low power dissipation and/or high noise immunity is desired.

  • 3Vdc to 18Vdc supply voltage range
  • All outputs buffered
  • Capable of driving two low-power TTL loads or one low-power schottky TTL load over the rated temperature range
  • Double diode protection on all inputs

The NTE4023B (14-Lead DIP) is triple 3-input NAND gate device constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure. This complementary MOS logic gate find primary use where low power dissipation and/or high noise immunity is desired.